Crucial Pro CP2K32G4DFRA32A memory module 64 GB 2 x 32 GB DDR4

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Description

Crucial Pro CP2K32G4DFRA32A memory module 64 GB 2 x 32 GB DDR4

Memory Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 4 GB Internal memory 4 GB Memory form factor 204-pin SO-DIMM ECC No Memory clock speed 1333 MHz Internal memory type DDR3L Features Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 4 GB Internal memory 4 GB Memory form factor 204-pin SO-DIMM ECC No Memory clock speed 1333 MHz Internal memory type DDR3L

Memory Buffered memory type Unregistered (unbuffered) Internal memory 4 GB Memory form factor 240-pin DIMM Memory ranking 2 ECC No Memory clock speed 1600 MHz Internal memory type DDR3 Features Buffered memory type Unregistered (unbuffered) Internal memory 4 GB Memory form factor 240-pin DIMM Memory ranking 2 ECC No Memory clock speed 1600 MHz Internal memory type DDR3

2 V Memory Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 16 GB Internal memory 16 GB Component for PC Memory form factor 288-pin DIMM CAS latency 22 Memory voltage 1

A Fujitsu / Siemens equivalent 4GB DIMM (PC3-10600) from Hypertec

2 V ECC No Memory clock speed 2400 MHz Internal memory type DDR4 Features Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 16 GB Internal memory 16 GB Component for Laptop Memory form factor 260-pin SO-DIMM Memory voltage 1

333 GHz Capacity 4 GB Features Compatible products Sony VAIO F Series VPC-F121FD/B

35 V Memory ranking 2 ECC No Memory clock speed 1600 MHz Internal memory type DDR3L

Persistent Memory

2 V Memory ranking 1 ECC No Memory clock speed 3200 MHz Internal memory type DDR4 Features Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 8 GB Internal memory 8 GB Component for PC Memory form factor 288-pin DIMM CAS latency 22 Memory voltage 1

The RDIMM configuration along with 3DS TSV DRAM packages exhibits performance benefits and lower power consumption over alternative high density solutions to ultimately provide the lowest TCO for data centers

and enabling greater operational efficiency by processing larger data sets with more user instances

2 V Memory Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 8 GB Internal memory 8 GB Component for Laptop Memory form factor 260-pin SO-DIMM CAS latency 19 Memory voltage 1

Exchange/Return Notes